Compound Semiconductor Devices and Circuits Committee
Objective
The EDS Technical Committee on Compound Semiconductor Devices & Circuits periodically meets to promote an effective dissemination and exchange of knowledge in the fields of devices and circuits based on compound semiconductors. Typical activity may include the organization of webinars, the promotion of special issues in IEEE journals, special sessions at conferences and workshops, with the ultimate goal of promoting the dissemination of knowledge in the fields of compound semiconductor devices and circuits
Membership
Members are volunteers who serve for a two-year renewable term at the invitation of the committee chair. Membership is limited to two consecutive terms so that new ideas can be generated, incorporated, and executed.
History
The committee is formed by a number of globally-recognized members of the industrial and academic research community, who are extremely active in the fields
Conferences
Contact
If you have ideas that you would like to have considered by this committee (e.g. a new workshop, aspecial issue, topics for special sessions, etc.) please contact any current committee member. If you would like to volunteer on the committee, please contact the committee chair.
Compound Semiconductor Devices & Circuits Committee Chair
Dr. Shireen Warnock is a technical staff member in the RF Technology Group at MIT Lincoln Laboratory. Her research interests include III-V materials systems, device characterization, and reliability.
Prior to joining the Laboratory, Shireen was a graduate student at the Massachusetts Institute of Technology (MIT), where her research focused on the dielectric reliability of gallium nitride metal-insulator-semiconductor high electron mobility transistors for power applications.
Dr. Warnock has authored or co-authored a number of journal and conference publications in the areas of gallium nitride device reliability. She currently serves on the Wide Bandgap sub-committee and the Management Committee for the IEEE International Reliability Physics Symposium.
She received BS, MEng, and PhD degrees in electrical engineering from the Massachusetts Institute of Technology.
Compound Semiconductor Devices & Circuits Committee Members
Dr MarinaAntoniou (MA) is an Associate Professor in the School of Engineering at the University of Warwick, UK. Dr Antoniou studied Electrical and Information Engineering (BA, MEng) at Trinity College, University of Cambridge and holds a PhD from the University of Cambridge. She has been the holder of several highly competitive research fellowships and grants including the Royal Society Research Fellowship 2017 (SiC Power Devices for Smart Grid Systems) , a Junior Research Fellowship (Selwyn College, Cambridge) and an Early Career EPSRC Centre for Power Electronics award, all of which involved the design and development of power SiC or Si high power devices. Her work has been published as first authored papers in leading IEEE journals and has received awards at international conferences. She has written five patents and two book chapters.
Nadine Collaert received the M.S. and Ph.D. degrees in electrical engineering from the ESAT Department, KU Leuven, Belgium, in 1995 and 2000, respectively. Since then, she has been involved in the theory, design, and technology of FinFET devices, emerging memory devices, transducers for biomedical applications and the integration and characterization of biocompatible materials e.g. carbon-based materials. From 2012 until April 2016 she was program manager of the imec LOGIC program, focusing on high mobility channels, TFET and nanowires. Since April 2016 she is a distinguished member of technical staff, responsible for the research on novel CMOS scaling approaches based on heterogeneous integration of new materials with Si and new material-enabled device and system approaches to increase functionality. She has authored or co-authored more than 300 papers in international journals and conference proceedings, and she holds more than 10 patents in the field of device design and process technology. She has been a member of the CDT committee of the IEDM conference and she is still a member of the Program Committees of the international conferences ESSDERC, ULIS/EUROSOI, NMDC, S3S and the VLSI Technology Symposium.
Dr. D. Nirmal is a Full Professor in Electronics and communication Engineering and Associate Dean Engineering and Technology, Karunya Institute of Technology and sciences. He specialized in VLSI Design after his Bachelor of Engineering and received his Ph.D in Information and Communication Engineering from Anna University. His research interests include Nanoelectronics, GaN Technology, Device and Circuit Simulation – GSL, Sensors, HEMT, Beyond 5G, Nanoscale device design and modelling. He is a founding chair of IEEE Electron Device Society Coimbatore chapter and Currently Region 10 IEEE EDS Chair and volunteered on several committees in IEEE. He has funded projects of 1.2 Cores from various agencies like DRDO (Defence Research and Development Organization), Ministry of Electronics and Information Technology, ISRO(Indian Space Research Organization) and AICTE(All India Council of Technical Education). He is a recipient of various awards namely IEI-Young Engineer award,IETE Smt. Manorama Rathore memorial award 2022 from IETE and Young Scientist Award 2019 from the Academy of Sciences. Prof.Nirmal has made more than 150+ peer reviewed research publications and three patents to his credits. He is also a Fellow of IETE and Senior IEEE member. He has delivered many Keynote talks, lectures in National and International Level conferences/Faculty Development programs.
Siddharth Rajan is Associate Professor in the Electrical and Computer Engineering and Material Science and Engineering departments at The Ohio State University, where he joined the faculty in 2008. He received his PhD in Electrical and Computer Engineering in 2006 from University of California, Santa Barbara, and has held research positions in UC Santa Barbara and GE Global Research, NY. His research interests include semiconductor devices and materials, molecular beam epitaxy, transport and heterostructure phenomena, and high frequency transistors. He has co-authored over 100 journal papers.
Wataru Saito received the B.S., M.S., and Ph.D. degrees in electrical and electronics engineering from Tokyo Institute of Technology, Tokyo, Japan, in 1994, 1996, and 1999, simultaneously. He joined Discrete Semiconductor Division, Toshiba Corporation Semiconductor Company, Kawasaki, Japan, in 1999, where he has been engaged in the development of power semiconductor devices. Since 2019, he is currently a Professor with Research Institute for Applied Mechanics, Kyushu University, Fukuoka, Japan.
Biography: Prof. Mayank Shrivastava is a Full Professor at the Indian Institute of Science, Bangalore, and co-founder of AGNIT Semiconductors Pvt. Ltd., which is a deep-tech start-up in the semiconductor space. He is also instrumental in setting up Gallium Nitride prototyping Fab worth 300 Crores. He is also the past chair of the Micro & Nanoelectronics program of IISc Bangalore, which in his tenure became one of the most sought-after master’s programs in the country. Besides, he consults various semiconductor firms in the USA, Germany, and India.
He received his Ph.D. degree from the Indian Institute of Technology Bombay. For his Ph.D. work, he received Excellence in Research award and the Industrial Impact award from IIT Bombay in the year 2010.
He joined the Indian Institute of Science as a faculty member in the year 2013. Prior to joining IISc, he held positions in Infineon Technologies, Munich, Germany; Infineon Technologies, East Fishkill, USA; IBM Microelectronics, Burlington, USA; Intel Mobile Communications, Hopewell Junction, USA; Intel Corp, Mobile and Communications Group, Munich, Germany, between 2009 and 2013. His Ph.D. work and research contributions during the industry tenure have resulted in several key semiconductor devices, which capture a reasonable real state in advanced SoC and automotive chip products in the market today.
Prof Shrivastava’s work has resulted in over 265 peer-reviewed international publications of high repute (over 60 of these papers are in IRPS and IEDM, the two most prestigious conferences of IEEE EDS where most of the breakthroughs are reported, and around 115 are in journals such as IEEE Transactions, Nature and ACS) and 60 patents. Most of these patents are either licensed by semiconductor companies or are in use in their products. He has guided/trained over 40 PhD students, over a dozen postdoc fellows, and over 100 master’s students and research staff.
He is among the first recipients of the Indian section of the American TR35 award (2010) and the first Indian to receive IEEE EDS Early Career Award (2015). He is also an Editor of IEEE Transactions on Electron Devices and IEEE Transactions on Materials for Electron Devices. Besides, he is an IEEE Electron Device’s Society (EDS) Distinguished Lecturer and an elected member of the IEEE EDS Board of Governors. He has also served on the technical and executive committees of over a dozen international conferences around the world.
Overall, he is a recipient of over 25 national and international awards, recognitions, and honors of high repute, such as the prestigious DST Swarnjayanti Fellowship (2021), Abdul Kalam Technology Innovation National Fellowship from INAE-SERB (2021), and the VASVIK award (2021), the National Academy of Sciences, India, (NASI) Young Scientist Platinum Jubilee Award – 2018; Indian National Academy of Science (INSA) Young Scientist Award – 2018; Indian National Academy of Engineering (INAE) Innovator Entrepreneur Award 2018 (Special commendation); Indian National Academy of Engineering (INAE) Young Engineer Award – 2017; INAE Young Associate (since 2017); Indian Academy of Sciences (IASc), Young Associate, 2018 – 2023; Ministry of Electronics & Information Technology (MeitY), Young Faculty Fellowship. Besides, he received best paper awards from several international conferences like Intel Corporation Asia academic forum, VLSI design Conference and EOSESD Symposium.
Prof Shrivastava broadly works on applications of emerging semiconductor materials like Gallium Nitride (GaN), atomically thin two-dimensional materials like Graphene and TMDCs, in electronic and electro-optic devices working closer to its fundamental limits. Besides, his group also works closely with semiconductor industries on developing novel device concepts for advanced CMOS and automotive nodes.
Zhikai Tang is the GaN Technology Lead Engineer and Senior Member Technical Staff in the Kilby Labs at Texas Instruments (TI) focusing on GaN power technology research and development. Prior to TI, he was leading the next-generation power GaN product development as the Director, Device Engineering and Member of the Technical Staff at Efficient Power Conversion (EPC) from 2014 to 2022. In the technical community, Dr. Tang is currently serving on the technical program committees of IEEE IEDM and WiPDA, and is also a JEDEC JC-70 committee member and co-chair on Standards for GaN Device Test & Characterization Methods. He is an editor of Japanese Journal of Applied Physics (JJAP) and Applied Physics Express (APEX), and reviewer for multiple technical journals. He is an IEEE Senior Member, EDS Compound Semiconductor Devices and Circuits Committee Member, and Member of the Japan Society of Applied Physics (JSAP). Dr. Tang has co-authored over 50 technical publications, more than 20 US patents and applications, and 1 book chapter in the field of GaN power device and IC technologies. He received the B.S. degree in Microelectronics from the University of Electronic Science and Technology of China and the Ph.D. degree in Electronic and Computer Engineering from the Hong Kong University of Science and Technology in 2010 and 2014, respectively.
Man Hoi Wong is an associate professor of Electronic and Computer Engineering at the Hong Kong University of Science and Technology (HKUST). His current research focuses on wide-bandgap oxide semiconductors and group-III nitride semiconductors for high-voltage and high-frequency electronic devices. Prof. Wong obtained his B.S. (summa cum laude) from Cornell University, USA, in 2004, with a double major in Electrical and Computer Engineering and Materials Science and Engineering. He received his Ph.D. in Electrical and Computer Engineering from the University of California Santa Barbara, USA, in 2009.
Prof. Wong contributed to the early development of nitrogen-polar GaN microwave power transistors and related thin-film growth techniques by molecular beam epitaxy. From 2011 to 2013, he was a research scientist at the SEMATECH corporate research consortium in Texas, USA, where he developed in-house epitaxial growth capability for III-V/Si monolithic integration. From 2013 to 2019, he demonstrated a series of Ga2O3 power devices at the National Institute of Information and Communications Technology (NICT) in Tokyo, Japan. Subsequently, he led a research group at the University of Massachusetts Lowell, USA, from 2019 as an assistant professor of Electrical and Computer Engineering before joining HKUST in 2022.
Prof. Wong has published extensively on Ga2O3 and GaN device technologies, including through invited talks and review articles. He has served on the technical program committees and organizing committees of multiple compound semiconductor device conferences. His work has been recognized by several awards, including a Best Paper Award at the IEEE Device Research Conference, SEMATECH’s Corporate Excellence Award, and NICT’s Individual Achievement Award.
